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Infineon Technologies BCR 162F E6327 — Discrete Semiconductors

BCR 162F E6327 PNP Pre-Biased Transistor, 100 mA, 50 V

MPNBCR 162F E6327
Obsolete

Infineon BCR 162F E6327, PNP pre-biased digital transistor, 100 mA collector current, 50 V VCEO, 200 MHz transition frequency, 4.7 kOhm bias resistors, SOT-723 surface-mount package.

Infineon Technologies BCR 162F E6327 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR 162F E6327 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce20 @ 5mA, 5V
Power - max200 mW
Frequency - transition200 MHz
PackageTape & Reel (TR)
CaseSOT-723
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased PNP for low-power switching

The BCR 162F E6327: The Infineon BCR 162F is a PNP pre-biased digital transistor in a SOT-723 surface-mount package. It integrates two 4.7 kOhm resistors — one in series with the base, one between base and emitter — so the part switches directly from a logic output without external bias components.

Switching speed and saturation

Transition frequency is 200 MHz, which is fast enough for low-frequency PWM or logic-level switching up to several megahertz. The 300 mV saturation voltage at 10 mA collector current and 500 µA base drive keeps conduction losses low in the on-state.

Sourcing an obsolete part

The BCR 162F is listed as obsolete.

Frequently asked questions

What is the maximum collector current of BCR 162F E6327?

The maximum collector current (Ic) is 100 mA, with a collector-emitter breakdown voltage of 50 V. These ratings define the switching capability for low-power loads.