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Infineon Technologies BCR 158T E6327 — Discrete Semiconductors
Infineon Technologies

BCR 158T E6327 PNP Pre-Biased Transistor, 200 MHz, SC-75

MPNBCR 158T E6327
End of Life

Infineon BCR 158T E6327 PNP pre-biased digital transistor, 100 mA collector current, 50 V Vce, 200 MHz transition frequency, SC-75 SOT-416 surface-mount package.

$0.1900Ref. price · indicative, final on quote
BCR 158T E6327 datasheet
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Specifications

BCR 158T E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency200 MHz
PackageTape & Reel (TR)
CaseSC-75, SOT-416
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

PNP pre-biased transistor with integrated bias network

The BCR 158T E6327: The Infineon BCR 158T is a PNP pre-biased digital transistor in a SC-75 (SOT-416) surface-mount package. It integrates a 2.2 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2) on-chip, eliminating the need for two external resistors per switching node. Rated for 100 mA continuous collector current and 50 V collector-emitter breakdown, with a transition frequency of 200 MHz.

BOM consolidation in a 250 mW package

The built-in resistor divider sets the base drive for a fixed gain of 70 minimum at 5 mA, 5 V. This simplifies the switching design for loads up to 100 mA — the transistor saturates at 300 mV with 500 µA base drive and 10 mA collector current. Maximum power dissipation is 250 mW in the SC-75 body. The small footprint (PG-SC75-3D) suits dense PCB layouts where a discrete resistor-transistor pair would consume roughly double the area.

Frequently asked questions

What is the maximum power dissipation of BCR 158T E6327?

The maximum power dissipation is 250 mW. In a typical switching application at 100 mA and 300 mV Vce(sat), the conduction loss is about 30 mW, leaving ample margin for the bias network losses.