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Infineon Technologies BCR 158L3 E6327 — Discrete Semiconductors

Infineon BCR 158L3 E6327 PNP Pre-Biased Transistor, 200 MHz

MPNBCR 158L3 E6327
End of Life

Infineon BCR 158L3 E6327, PNP - Pre-Biased, 50 V, 100 mA, 200 MHz, 250 mW, SC-101 (SOT-883), Surface Mount, Tape & Reel (TR).

$0.2700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR 158L3 E6327 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency - transition200 MHz
PackageTape & Reel (TR)
CaseSC-101, SOT-883
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What this pre-biased PNP transistor does on your board

It integrates a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), so you can drive it directly from a logic output without adding external bias components. The 200 MHz transition frequency also makes it usable for moderate-speed level translation or buffer stages.

Built-in resistor network — what it saves you

The 2.2 kΩ base resistor sets the base current when the input is pulled low, while the 47 kΩ emitter-base resistor ensures a clean off-state by shunting leakage. That means a single BCR 158L3 replaces a discrete PNP plus two resistors, shrinking the footprint and cutting placement cost.

Frequently asked questions

What are the specifications of BCR 158L3 E6327?

It is a PNP pre-biased digital transistor with a 50 V collector-emitter breakdown, 100 mA continuous collector current, 200 MHz transition frequency, and 250 mW power dissipation. Built-in resistors are 2.2 kΩ (base) and 47 kΩ (emitter-base). The package is SC-101 (SOT-883) for surface mounting.