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Infineon Technologies BCR 151F E6327 — Discrete Semiconductors

Infineon BCR 151F E6327 PNP Pre-Biased Transistor, 50 V

MPNBCR 151F E6327
End of Life

Infineon BCR 151F E6327 PNP pre-biased transistor, 50 V VCEO, 50 mA Ic, 100 kΩ R1/R2, SOT-723, PG-TSFP-3, Tape & Reel.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR 151F E6327 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)50 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency - transition120 MHz
PackageTape & Reel (TR)
CaseSOT-723
Resistor - base (R1)100 kOhms
Resistor - emitter base (R2)100 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Pre-biased PNP in SOT-723

The BCR 151F E6327 is a PNP pre-biased transistor from Infineon, integrating two 100 kΩ resistors (R1 and R2) in the base and emitter-base legs — the bias network is on-die, so the BOM saves one or two passives per position. Rated for 50 V collector-emitter breakdown and 50 mA continuous collector current, with a maximum power dissipation of 250 mW. The 120 MHz transition frequency keeps switching edges clean in low-speed logic or driver interfaces.

Housed in a SOT-723 surface-mount package (Infineon code PG-TSFP-3), the footprint is compact — three leads, 0.50 mm pitch typical — and the low profile suits dense, low-height assemblies. Supplied on Tape & Reel for automated pick-and-place.

Marked as current production by Infineon.

Frequently asked questions

How can I get current pricing and availability for BCR 151F E6327?

Submit an RFQ through this listing. The part is sourced through independent distribution; pricing and stock levels are confirmed at quote time.

What are the key electrical ratings of BCR 151F E6327?

50 V VCEO breakdown, 50 mA continuous collector current, 250 mW max power dissipation. Built-in bias resistors are 100 kΩ each for R1 and R2.