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Infineon Technologies BCR 139F E6327 — Discrete Semiconductors

BCR 139F E6327 NPN Pre-Biased Transistor

MPNBCR 139F E6327
Obsolete

Infineon BCR 139F E6327 NPN pre-biased transistor, 50 V Vce, 100 mA Ic, 22 kOhms R1, 150 MHz fT, SOT-723 package, 250 mW max power.

Infineon Technologies BCR 139F E6327 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR 139F E6327 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max250 mW
Frequency - transition150 MHz
PackageTape & Reel (TR)
CaseSOT-723
Resistor - base (R1)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN — what it replaces

The 22 kOhms base resistor (R1) is integrated, so it switches on with about 5 V on the base pin — no external bias network needed. Collector current is rated 100 mA max, Vce breakdown at 50 V, and transition frequency hits 150 MHz.

Obsolete — sourcing the line

Infineon lists the BCR 139F as Obsolete.

Supplied in Tape & Reel (TR), surface-mount to a SOT-723 footprint. The supplier device package is PG-TSFP-3 — three leads, no exposed pad. At 250 mW max power, thermal management is straightforward for low-current switching up to 100 mA.

Frequently asked questions

What is the replacement for BCR 139F E6327?

For a pin-compatible drop-in, look for another NPN pre-biased transistor in SOT-723 with the same 22 kOhms base resistor and 50 V / 100 mA ratings — but verify the footprint and bias resistor values against your board before substitution.

Where to buy BCR 139F E6327?

Submit a request for current availability and pricing — no commitment until you quote.

What are the electrical specs (Ic, Vce, R1) of BCR 139F E6327?

Collector current (Ic) is rated 100 mA max, collector-emitter breakdown (Vce) at 50 V, base resistor (R1) is 22 kOhms. DC current gain (hFE) is minimum 120 at 5 mA, 5 V. Vce saturation is 300 mV at 500 µA base, 10 mA collector. Cutoff leakage is 100 nA max.