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Infineon Technologies BCR135TE6327 — Discrete Semiconductors
Infineon Technologies

BCR135TE6327 NPN Pre-Biased Transistor, 50 V, 100 mA

MPNBCR135TE6327
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Infineon BCR135TE6327 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 150 MHz fT, integrated 10 kΩ base resistor and 47 kΩ base-emitter resistor, PG-SOT23-3-11 package, Bulk.

BCR135TE6327 datasheet
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Specifications

BCR135TE6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency150 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN – what it saves on the BOM

The Infineon BCR135TE6327 is an NPN pre-biased transistor in a PG-SOT23-3-11 package. It integrates a 10 kΩ base resistor (R1) and a 47 kΩ base-emitter resistor (R2) on-chip, eliminating two external passives per transistor from the board. The collector-emitter breakdown is rated at 50 V, with a maximum collector current of 100 mA and a transition frequency of 150 MHz.

Maximum power dissipation is 200 mW. In a SOT-23-3 footprint, that limits continuous collector current at higher VCE — for a 5 V rail, 40 mA continuous is about the practical ceiling before junction temperature becomes the constraint. The 300 mV saturation voltage at 500 µA base drive and 10 mA collector current gives a clean low-side switch with minimal voltage drop.

Frequently asked questions

What is the closest pin-compatible alternative to BCR135TE6327 in this component family?

Within the same Infineon pre-biased NPN family, the BCR135 series shares the same SOT-23-3 footprint and 50 V / 100 mA ratings. The differentiating factor is the internal resistor ratio — the BCR135 uses 10 kΩ base / 47 kΩ base-emitter. A direct pin-compatible alternative would need the same resistor values; parts with different R1/R2 ratios will shift the on/off threshold and saturation drive.

What is BCR135TE6327's listed power dissipation?

The maximum power dissipation is 200 mW. In a SOT-23-3 package this limits continuous collector current at higher VCE — for a 5 V rail, 40 mA continuous is a practical ceiling before junction temperature becomes the constraint.