Skip to main content
Infineon Technologies BCR133TE6327 — Discrete Semiconductors
Infineon Technologies

Infineon BCR133TE6327 NPN Pre-Biased Transistor, 50 V

MPNBCR133TE6327
Active

Infineon BCR133TE6327 NPN pre-biased digital transistor, 50 V VCEO, 100 mA Ic, 10 kΩ base and emitter-base resistors, 130 MHz transition frequency, SOT-23-3 package, active.

BCR133TE6327 datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR133TE6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max200 mW
Frequency130 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN — one component replaces three

The Infineon BCR133TE6327 is an NPN pre-biased transistor in a SOT-23-3 package. It integrates a 10 kΩ base resistor (R1) and a 10 kΩ emitter-base resistor (R2) on-chip, so a single part replaces the transistor plus two external resistors in a common-emitter switching circuit. Collector-emitter breakdown is rated at 50 V, continuous collector current at 100 mA, and the transition frequency is 130 MHz — enough for low-speed switching up to a few megahertz.

Package and mounting

With 500 µA base drive and 10 mA collector current, Vce(sat) max is 300 mV. That is a clean on-state voltage for a 5 V or 3.3 V logic-level load — the transistor will not eat into the rail margin. The minimum DC current gain of 30 at 5 mA, 5 V means the base drive needs to be about 3% of the load current to guarantee saturation. For a 100 mA load, plan on at least 3.3 mA into the base resistor.

Leakage and cutoff — 100 nA max ICBO

Collector cutoff current is specified at 100 nA maximum (ICBO). That is low enough for most battery-powered or high-impedance nodes — a pulled-up digital input will not drift. If the application is sensitive to sub-microamp leakage, this part holds the line.

Frequently asked questions

What does pre-biased mean for BCR133TE6327?

Pre-biased means the transistor has two bias resistors integrated in the same package: a 10 kΩ resistor between the base and the input pin (R1), and a 10 kΩ resistor between the base and emitter (R2). This eliminates two external resistors from the PCB, saving board area and reducing component count. The transistor behaves like a standard NPN but with the bias network built in.

What is the leakage current of BCR133TE6327?

The maximum collector cutoff current (ICBO) is 100 nA. This is the leakage from collector to base with the emitter open, and it is low enough for most digital switching and battery-operated circuits.

What are the alternatives for BCR133TE6327?

The BCR133TE6327 is a pre-biased NPN with 10 kΩ / 10 kΩ resistors. Other parts in the same Infineon BCR1xx family use different resistor ratios (e.g., 2.2 kΩ / 47 kΩ, 4.7 kΩ / 4.7 kΩ) — the correct alternative depends on the required base drive and off-state threshold. No single pin-compatible drop-in covers all ratios; check the resistor values against your circuit.