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Infineon Technologies BCR 119L3 E6327 — Discrete Semiconductors

Infineon BCR 119L3 E6327 NPN Pre-Biased Transistor, 50 V

MPNBCR 119L3 E6327
End of Life

Infineon BCR 119L3 E6327, NPN Pre-Biased, 50 V Vce, 100 mA Ic, 150 MHz, 4.7 kOhms base resistor, SC-101 SOT-883, Surface Mount, 250 mW.

$0.2900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR 119L3 E6327 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max250 mW
Frequency - transition150 MHz
PackageTape & Reel (TR)
CaseSC-101, SOT-883
Resistor - base (R1)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN — one resistor fewer on the BOM

The BCR 119L3 E6327: The Infineon BCR 119L3 is an NPN pre-biased transistor in a tiny SC-101 / SOT-883 package (PG-TSLP-3-4). The built-in 4.7 kOhms base resistor (R1) eliminates an external component, saving board area and reducing placement cost in high-volume designs.

150 MHz transition frequency — fast enough for most low-power switching

A transition frequency of 150 MHz means this part switches cleanly into the low-MHz range, suitable for PWM dimming, relay drivers, and signal-level translation up to a few megahertz. The DC current gain minimum of 120 at 5 mA, 5 V gives plenty of drive headroom for saturating the output at modest base current. Saturation voltage is specified at 300 mV maximum with 500 µA base drive and 10 mA collector current — tight enough to keep dissipation low in a 250 mW package.

Frequently asked questions

What package does BCR 119L3 E6327 come in?

It is supplied in an SC-101 / SOT-883 surface-mount package, also designated PG-TSLP-3-4 by Infineon. The shipping form is Tape & Reel (TR).