Dual NPN pre-biased transistor in a 6-pin SOT-363
The Infineon BCR 116S H6727 integrates two NPN transistors with built-in bias resistors in a single PG-SOT363-PO package. Each transistor has a base resistor (R1) of 4.7kΩ and a base-emitter resistor (R2) of 47kΩ, eliminating the need for external biasing components in low-current switching applications. Rated for a collector current of 100mA and a collector-emitter breakdown voltage of 50V, with a transition frequency of 150MHz. The 250mW power dissipation limit applies to the total package, not per transistor. The surface-mount SOT-363 footprint suits automated assembly in consumer, industrial, and automotive auxiliary circuits.
The 50V collector-emitter breakdown covers 12V and 24V industrial rails with derating margin, but is not suitable for 48V systems where a 60V or 80V part would be needed. The 100mA continuous collector current is adequate for driving small relays, optocoupler LEDs, and logic-level loads; for loads above 80mA, check the saturation voltage at 300mV at 10mA to confirm headroom. The integrated 4.7kΩ base resistor and 47kΩ base-emitter resistor set a fixed base current for a given input voltage — typically 5V logic yields about 0.9mA base drive, which with a minimum hFE of 70 at 5mA gives enough collector current for the rated 100mA. No external base resistor is needed, saving one component per transistor.