The BCR 116S E6727: Infineon has marked this part as Obsolete. For a stalled production line or a repair job, the only path is the surplus and broker market — which is where this listing sits.
What this dual pre-biased NPN does
The BCR 116S E6727 packs two NPN transistors with integrated bias resistors into a single SOT-363 package. Each transistor has a 4.7 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating the need for external resistors in common switching and driver stages. Collector-emitter breakdown is rated at 50 V, continuous collector current at 100 mA, and transition frequency at 150 MHz — figures that suit low-power relay drivers, LED indicators, and logic-level interface circuits where board space is tight.
Saturation and gain at low current
Vce(sat) is specified at 300 mV maximum with a 500 µA base drive and 10 mA collector load — a clean saturation voltage that keeps dissipation low in switched loads. DC current gain (hFE) is a minimum of 70 at 5 mA collector current and 5 V Vce, giving adequate drive margin for most low-current switching tasks.
Package and power handling
Housed in the PG-SOT363-PO package (the Infineon variant of SOT-363), this is a surface-mount device. Maximum power dissipation is 250 mW total for the dual transistor — budget derating if both channels are driven near their 100 mA limit simultaneously.