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Infineon Technologies BCR 116F E6327 — Discrete Semiconductors
Infineon Technologies

Infineon BCR 116F E6327 NPN Pre-Biased Transistor, SOT-723

MPNBCR 116F E6327
End of Life

Infineon BCR 116F E6327 NPN pre-biased digital transistor, 50 V VCEO, 100 mA IC, 250 mW, SOT-723 surface-mount package, built-in bias resistors R1 4.7 kΩ, R2 47 kΩ.

BCR 116F E6327 datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR 116F E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency150 MHz
PackageTape & Reel (TR)
CaseSOT-723
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN for compact switching

The BCR 116F E6327: NPN pre-biased digital transistor in a SOT-723 surface-mount package. It integrates two bias resistors — a 4.7 kΩ base resistor (R1) and a 47 kΩ base-emitter resistor (R2) — so you can drive it directly from a logic output without external resistors. This saves board space and reduces component count in high-density designs like I/O modules, relay drivers, and signal-level switches.

Key ratings at a glance

Collector-emitter breakdown voltage is 50 V, with a maximum continuous collector current of 100 mA. Power dissipation is capped at 250 mW. DC current gain (hFE) is a minimum of 70 at 5 mA collector current and 5 V VCE. Saturation voltage is 300 mV maximum at 500 µA base current and 10 mA collector current. Transition frequency is 150 MHz, adequate for low-speed switching up to a few megahertz.

Package and storage note

Housed in a SOT-723 package (supplier device code PG-TSFP-3), this is a three-lead surface-mount device. Store the reels dry — MSL level is typical for this package class, so keep the moisture barrier bag sealed until reflow.

Frequently asked questions

What is the difference between BCR 116F and other Infineon NPN pre-biased transistors like BCR 116S?

The BCR 116F uses a SOT-723 package (PG-TSFP-3), while the BCR 116S typically comes in a SOT-363 or similar larger package. The BCR 116F is the more compact option for space-constrained layouts; electrical specs (50 V, 100 mA, same resistor values) are identical across the family.

What are the specifications of BCR 116F E6327?

It is an NPN pre-biased transistor with 50 V collector-emitter breakdown, 100 mA maximum collector current, 250 mW power dissipation, built-in resistors R1 = 4.7 kΩ and R2 = 47 kΩ, minimum hFE of 70 at 5 mA / 5 V, and transition frequency of 150 MHz. Package is SOT-723 (PG-TSFP-3).