Infineon BCR 114T E6327 NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 160 MHz transition frequency, SC-75 SOT-416 surface-mount package, 250 mW power dissipation.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 30 @ 5mA, 5V |
| Power - max | 250 mW |
| Frequency - transition | 160 MHz |
| Package | Tape & Reel (TR) |
| Case | SC-75, SOT-416 |
| Resistor - base (R1) | 4.7 kOhms |
| Resistor - emitter base (R2) | 10 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 500µA, 10mA |
The BCR 114T E6327: The Infineon BCR 114T is an NPN pre-biased transistor in a SC-75 SOT-416 package. It integrates a 4.7 kOhm base resistor (R1) and a 10 kOhm emitter-base resistor (R2). The 250 mW power limit in the SC-75 body means derating matters at higher ambient temperatures — at 85 °C you're looking at roughly half that budget, so check the load current against the Vce(sat) drop at 10 mA (300 mV max).
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