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Infineon Technologies BCR 114T E6327 — Discrete Semiconductors
Infineon Technologies

Infineon BCR 114T E6327 NPN Pre-Biased Transistor, SC-75

MPNBCR 114T E6327
End of Life

Infineon BCR 114T E6327 NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 160 MHz transition frequency, SC-75 SOT-416 surface-mount package, 250 mW power dissipation.

$0.2200Ref. price · indicative, final on quote
BCR 114T E6327 datasheet
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MOQ1 pcs
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Specifications

BCR 114T E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency160 MHz
PackageTape & Reel (TR)
CaseSC-75, SOT-416
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN in SC-75 — when you need to drop the resistor count

The BCR 114T E6327: The Infineon BCR 114T is an NPN pre-biased transistor in a SC-75 SOT-416 package. It integrates a 4.7 kOhm base resistor (R1) and a 10 kOhm emitter-base resistor (R2). Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current. The 250 mW power limit in the SC-75 body means derating matters at higher ambient temperatures — at 85 °C you're looking at roughly half that budget, so check the load current against the Vce(sat) drop at 10 mA (300 mV max).

Frequently asked questions

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Is BCR 114T E6327 equivalent to other pre-biased transistors?

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What is the pinout of BCR 114T E6327?

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