Pre-biased NPN for space-constrained switching
The BCR 114L3 E6327: NPN pre-biased digital transistor integrating R1 = 4.7 kΩ and R2 = 10 kΩ. 50 V Vceo, 100 mA Ic, 160 MHz fT.
Bias resistor ratio sets the input threshold
The DC current gain minimum of 30 at 5 mA, 5 V ensures adequate drive for the rated collector current. Saturation voltage is specified at 300 mV max with 500 µA base drive and 10 mA collector current — a clean on-state drop that keeps dissipation low in continuous-switching applications.
Package and footprint for high-density boards
SC-101 / SOT-883 package (PG-TSLP-3-4). Surface-mount assembly. Maximum power dissipation 250 mW.
Infineon lists the BCR 114L3 E6327 as Active.
