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Infineon Technologies BCR 114F E6327 — Discrete Semiconductors

BCR 114F E6327 NPN Pre-Biased Transistor, 50 V, 100 mA

MPNBCR 114F E6327
Obsolete

Infineon BCR 114F E6327, NPN Pre-Biased, 50 V Vce, 100 mA Ic, 160 MHz, 4.7 kOhms R1, 10 kOhms R2, SOT-723, Tape & Reel.

$0.2200Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR 114F E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency160 MHz
PackageTape & Reel (TR)
CaseSOT-723
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN in SOT-723

The Infineon BCR 114F E6327 is a pre-biased NPN transistor in a SOT-723 surface-mount package, integrating two bias resistors—a 4.7 kOhms base resistor (R1) and a 10 kOhms emitter-base resistor (R2)—to simplify driver and switching circuits. With a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, it targets low-current switching and interface applications where external bias components would otherwise consume board area. The device is specified for a DC current gain (hFE) of 30 minimum at 5 mA, 5 V, and a transition frequency of 160 MHz, suitable for signal-level switching up to moderate speeds.

Built-in resistors: what the values mean

The 4.7 kOhms base resistor and 10 kOhms emitter-base resistor set a fixed bias point, so the transistor turns on with a predictable base current from a logic-level or MCU output—no external resistor network needed. The Vce saturation of 300 mV at 500 µA base drive and 10 mA collector current gives a low on-state voltage drop for a 100 mA rated part, keeping dissipation manageable in a 250 mW package.

Obsolete — sourcing through independent distribution

The BCR 114F carries an obsolete lifecycle status.

Frequently asked questions

What is the transistor type of BCR 114F E6327?

The BCR 114F E6327 is an NPN pre-biased transistor, meaning it includes two integrated bias resistors: a 4.7 kOhms base resistor and a 10 kOhms emitter-base resistor.