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Infineon Technologies BCR 112F E6327 — Discrete Semiconductors

Infineon BCR 112F E6327 NPN Pre-Biased Transistor, SOT-723

MPNBCR 112F E6327
Obsolete

Infineon BCR 112F E6327 NPN pre-biased transistor, 50 V VCEO, 100 mA IC, dual 4.7 kΩ bias resistors, 140 MHz transition frequency, SOT-723 package, 250 mW power dissipation.

$0.1400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR 112F E6327 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce20 @ 5mA, 5V
Power - max250 mW
Frequency - transition140 MHz
PackageTape & Reel (TR)
CaseSOT-723
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

The BCR 112F E6327: NPN pre-biased transistor with dual 4.7 kΩ resistors (R1 and R2) integrated. Switches loads up to 100 mA at 50 V, transition frequency 140 MHz, SOT-723 package.

Sourcing is limited to surplus inventory, broker channels, and independent distribution.

Bias resistor ratio — the so-what

Both R1 (base) and R2 (base-emitter) are 4.7 kΩ, giving a 1:1 ratio. This sets the input voltage threshold at roughly half the supply when driven from a GPIO, and the 4.7 kΩ base resistor limits base current without an external part. The 100 nA collector cutoff (ICBO) means leakage is negligible at room temperature, so the output stays off when the input is low. The 300 mV saturation at 500 µA base, 10 mA collector gives a low on-state voltage drop for small-signal switching.

Frequently asked questions

Is BCR 112F E6327 obsolete?

Yes, Infineon lists the BCR 112F E6327 as Obsolete. It is no longer in production, and no direct replacement order code is provided. Sourcing is through surplus and independent distribution channels.

What are the specifications of BCR 112F E6327?

It is an NPN pre-biased transistor with 50 V VCEO, 100 mA collector current, dual 4.7 kΩ bias resistors, 140 MHz transition frequency, 250 mW power dissipation, and a 300 mV saturation voltage at 500 µA base / 10 mA collector. It comes in a SOT-723 surface-mount package.