Pre-biased NPN for space-constrained switching
The BCR 108T E6327: The Infineon BCR 108T is an NPN pre-biased digital transistor in a SC-75 (SOT-416) surface-mount package. It integrates a 2.2 kOhms base resistor (R1) and a 47 kOhms emitter-base resistor (R2), eliminating two external passives from the board. Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, it suits low-power switching and interface applications where board area is at a premium.
The 170 MHz transition frequency (fT) is adequate for switching up to several megahertz, typical for load drivers, relay coils, or logic-level translation. The 300 mV Vce saturation at 500 µA base and 10 mA collector ensures low on-state voltage drop, keeping dissipation within the 250 mW package limit. The 100 nA collector cutoff current (ICBO) is tight enough for battery-powered circuits where leakage matters. Minimum DC current gain (hFE) of 70 at 5 mA collector current and 5 V Vce provides consistent drive capability across production lots. The pre-biased resistors set a fixed base current, so the designer does not need to calculate external bias networks — just drive the input pin with a logic-level signal.
Infineon lists the BCR 108T as obsolete. No direct replacement is specified in the available records.
