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Infineon Technologies BCR 108F E6327 — Discrete Semiconductors

Infineon BCR 108F E6327 NPN Pre-Biased Transistor, 50 V

MPNBCR 108F E6327
Obsolete

Infineon BCR 108F E6327, NPN Pre-Biased, 50 V VCEO, 100 mA IC, 170 MHz fT, R1 2.2 kOhms, R2 47 kOhms, SOT-723, PG-TSFP-3, Surface Mount, 250 mW.

$0.2200Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR 108F E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency170 MHz
PackageTape & Reel (TR)
CaseSOT-723
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Obsolete — sourcing through independent distribution

The Infineon BCR 108F E6327 is an NPN pre-biased digital transistor, officially listed as obsolete. It integrates a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating the need for external biasing components in low-power switching circuits. With a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, it suits relay drivers, LED drivers, and logic-level interface stages. The 170 MHz transition frequency keeps switching losses low in applications up to a few MHz.

Package and footprint — SOT-723

Housed in a SOT-723 package (Infineon code PG-TSFP-3), the BCR 108F E6327 measures roughly 1.2 x 1.2 mm — a tiny three-lead surface-mount package. Hand-soldering is possible with a fine tip and steady hands, but a hot-air station or reflow profile is more reliable. The 250 mW power dissipation limit means the part is intended for low-power signal switching, not continuous high-current loads.

Saturation and gain — what the numbers mean

VCE(sat) is specified at 300 mV maximum with a base current of 500 µA and collector current of 10 mA — a typical drive condition for saturating the transistor in a switching application. The minimum DC current gain (hFE) of 70 at 5 mA collector current and 5 V VCE gives enough headroom for logic-level drive. Collector cutoff current is a low 100 nA, so leakage won't load down a high-impedance node in off state.

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