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Infineon Technologies BCR 108 B6327 — Discrete Semiconductors

BCR 108 B6327 NPN Pre-Biased Transistor, 50 V, 100 mA

MPNBCR 108 B6327
Obsolete

Infineon BCR 108 B6327 NPN pre-biased transistor, 50 V Vce, 100 mA Ic, 170 MHz ft, built-in 2.2 kΩ base and 47 kΩ emitter-base resistors, PG-SOT23 package, Tape & Reel.

$0.1300Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR 108 B6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency170 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN in SOT-23 — what the bias resistors save

The Infineon BCR 108 B6327 is an NPN pre-biased transistor in a PG-SOT23 package, integrating a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2) on-chip. This eliminates two external resistors per transistor, shrinking the BOM and board area for switching and driver stages. Collector-emitter breakdown is rated at 50 V, continuous collector current at 100 mA, and the transition frequency reaches 170 MHz.

Infineon lists the BCR 108 B6327 as obsolete. No official successor is recorded in the lifecycle data.

Frequently asked questions

What is the replacement for BCR 108 B6327?

For a pin-compatible alternative, look for other NPN pre-biased transistors in SOT-23 with the same 2.2 kΩ base and 47 kΩ emitter-base resistor values — but verify the pinout and ratings against your design.