Dual PNP in a 65 V, 100 mA footprint
The Infineon BC856SH6327XTSA1 packs two matched PNP transistors into a single SOT-363 package, saving board space over two discrete SOT-23 devices. Each transistor is rated for a collector-emitter breakdown of 65 V and a continuous collector current of 100 mA, with a minimum DC current gain of 200 at 2 mA collector current and 5 V Vce. The 250 MHz transition frequency suits general-purpose switching and amplification up to low-MHz ranges. Maximum power dissipation for the dual device is 250 mW, and the junction temperature rating of 150°C covers most industrial ambient conditions.
Last Buy — procurement window closing
Infineon has placed the BC856SH6327XTSA1 in Last Buy status. This is the final procurement phase for this order code. Buyers should secure lifetime or bridge-buy quantities now, as once the last-time-buy window closes the part will only be available through surplus or broker channels.
SOT-363 footprint — what fits
The package is a 6-lead SOT-363 (also known as SC-88 or 6-VSSOP), with Infineon's own designator PG-SOT363-PO. The 1.25 mm body width and 0.65 mm lead pitch are standard for this industry footprint. Any replacement or second-source candidate must match this mechanical outline to avoid a board respin.