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Infineon Technologies BC856BWE6327 — Discrete Semiconductors

BC856BWE6327 PNP transistor, 65 V, 100 mA, 250 MHz, AEC-Q101

MPNBC856BWE6327
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Infineon BC856BWE6327 PNP transistor, Automotive AEC-Q101, 65 V Vce, 100 mA Ic, 250 MHz fT, hFE 220 min, SC-70/SOT-323 package, surface mount, 330 mW.

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MOQ1 pcs
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  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BC856BWE6327 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typePNP
Voltage - collector emitter breakdown65 V
Current - collector (Ic)100 mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce220 @ 2mA, 5V
Power - max330 mW
Frequency250MHz
Operating temperature150°C(TJ)
PackageBulk
CaseSC-70, SOT-323
Vce saturation (Max) @ ib, ic650mV @ 5mA, 100mA

Product details

The Infineon BC856BWE6327 is a PNP bipolar junction transistor in a compact SC-70 (SOT-323) surface-mount package. It is rated for a collector-emitter breakdown voltage of 65 V and a continuous collector current of 100 mA, with a power dissipation of 330 mW. The device carries AEC-Q101 automotive qualification, meaning it is documented and tested for use in automotive electronics under IATF 16949 quality management — not just 'automotive-capable' but formally qualified with PPAP-ready data. Typical applications include switching and amplification in automotive body control modules, engine management, infotainment, and industrial control circuits where a small-signal PNP is needed in a space-constrained layout.

Key specs that decide the fit

The 65 V Vce breakdown gives comfortable margin on nominal 12 V and 24 V automotive rails, and handles load-dump transients up to 40 V as long as the avalanche energy stays within the single-pulse SOA. The 250 MHz transition frequency means this transistor can switch at several megahertz or amplify signals into the VHF range — useful for DC-DC converter gate drive buffers or RF pre-driver stages. hFE is specified at a minimum of 220 at 2 mA collector current and 5 V Vce, which provides consistent gain in analog current mirrors or level shifters; the gain holds well into the milliampere range, so the part is a good fit for low-power signal conditioning. Saturation voltage is 650 mV max at 5 mA base current and 100 mA collector current — a moderate Vce(sat) typical for small-signal PNP devices, acceptable for switching loads that do not require deep saturation. Collector cutoff current is specified at 15 nA maximum, which is tight enough for battery-powered wake-up circuits where leakage matters.

Package and mounting

The SC-70 (SOT-323) package has a 1.25 x 2.0 mm footprint with 0.65 mm pin pitch — small enough for dense multilayer boards but still hand-solderable with a fine tip. The supplier device package is PG-SOT323-3-1, which is Infineon's designation for the green-moulded version. Standard MSL 1 handling applies, so no bake required before reflow if the bag seal is intact.

Lifecycle and sourcing posture

This is a current-production part from Infineon, widely available through the distribution channel. For BOM lines requiring a qualified automotive-grade PNP in SC-70, this part is a low-risk, single-source item — no LTB risk, no forced redesign horizon.

Frequently asked questions

What is the BC856BWE6327 transistor?

The BC856BWE6327 is a PNP bipolar junction transistor from Infineon, rated for 65 V collector-emitter breakdown, 100 mA collector current, and 250 MHz transition frequency. It is housed in an SC-70 (SOT-323) surface-mount package and qualified to AEC-Q101 for automotive applications.

What is the hFE of BC856BWE6327?

The DC current gain (hFE) is specified at a minimum of 220 when tested at 2 mA collector current and 5 V collector-emitter voltage.

Is BC856BWE6327 automotive qualified?

Yes. It is part of Infineon's Automotive series and carries AEC-Q101 qualification, which means it is documented and tested to automotive reliability standards with PPAP data available.