65 V PNP small-signal transistor for automotive and industrial loads
The Infineon BC856AE6327 is a PNP general-purpose bipolar transistor in the SOT-23-3 surface-mount package, qualified to AEC-Q101 for automotive applications. It handles a 65 V collector-emitter breakdown and 100 mA continuous collector current, with a guaranteed DC current gain (hFE) of 125 minimum at 2 mA collector current and 5 V Vce. The 250 MHz transition frequency supports switching into the tens of MHz range.
hFE of 125 at 2 mA — drive margin for low-current loads
The minimum DC current gain of 125 at only 2 mA collector current means this transistor delivers solid gain even in low-bias conditions. For a 10 mA load, a base drive of just 80 µA suffices, keeping the upstream driver (GPIO pin or previous stage) lightly loaded. The gain is specified at 5 V Vce, which matches typical 5 V logic rails. If the application runs at 3.3 V, the gain will be slightly lower, but the 125 floor at 5 V still provides comfortable headroom for most small-signal switching.
For BOM planning, the active status means standard lead times through distribution apply, and no allocation or LTB scheduling is required.
SOT-23-3 footprint and 330 mW power ceiling
The transistor is supplied in a PG-SOT23-3-1 package (standard SOT-23-3 footprint). The 330 mW maximum power dissipation at 25 °C ambient is typical for this package. For continuous operation near the 100 mA collector current, derate for ambient temperature: at 85 °C the allowable dissipation drops to roughly 200 mW (derating ~2.8 mW/°C above 25 °C). The 150 °C junction temperature rating allows short-duration excursions in under-hood or engine-bay environments, but sustained high-current operation should be verified against the thermal resistance.