The Infineon BC846BWE6327 is a small-signal NPN bipolar junction transistor in a SOT-323 (SC-70) surface-mount package. The B-grade selection guarantees a DC current gain (hFE) of at least 200 at 2 mA collector current, which is useful when the base drive is limited. With a transition frequency of 250 MHz, it can handle small-signal RF stages up to VHF. Typical applications include signal amplification, relay and LED drivers, and logic-level interfacing in consumer, industrial, and automotive electronics where the 150°C junction temperature rating provides margin under load.
The 65 V Vceo and 100 mA Ic define the safe operating area for this transistor. In a typical low-side switch driving a 12 V relay or a 24 V industrial PLC input, the voltage headroom is generous. The 100 mA collector current limit means it is not a power transistor — keep the load under 80 mA for derating. The 330 mW power dissipation is the package limit; at 100 mA and a Vce(sat) of 600 mV, dissipation is only 60 mW, so thermal margin is ample in most designs. The minimum hFE of 200 at 2 mA, 5 V means a base current of just 10 µA can saturate a 2 mA load. This is the B-grade bin — tighter gain spread than the A-grade, which helps in production where gain variation matters for biasing. The 250 MHz fT is high enough for small-signal RF amplifiers up to VHF, but the device is not characterised for RF noise figure, so treat it as a general-purpose transistor first. The Vce(sat) of 600 mV maximum at 5 mA base and 100 mA collector is typical for a small-signal NPN. In a saturated switch, this drop times the collector current gives the on-state loss — about 60 mW at full load, well within the 330 mW package limit.
The SOT-323 (SC-70) package is a compact three-lead surface-mount footprint, roughly 2.0 mm × 1.25 mm. The listing shows the shipping medium as Bulk, meaning loose parts in a bag or tube — not Tape & Reel.