Skip to main content
Infineon Technologies BC846BB5000 — Discrete Semiconductors

Infineon BC846BB5000 NPN Transistor, 65 V, 100 mA, SOT-23-3

MPNBC846BB5000
Active

Infineon BC846BB5000 NPN transistor, 65 V Vceo, 100 mA Ic, 250 MHz fT, hFE min 200 @ 2 mA, SOT-23-3 package, 330 mW, Active.

StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BC846BB5000 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown65 V
Current - collector (Ic)100 mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 5V
Power - max330 mW
Frequency250MHz
Operating temperature150°C(TJ)
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic600mV @ 5mA, 100mA

Product details

The Infineon BC846BB5000 is a general-purpose NPN transistor in the standard SOT-23-3 surface-mount package. It's rated for a collector-emitter breakdown of 65 V and a continuous collector current of 100 mA, with a power dissipation ceiling of 330 mW. The 250 MHz transition frequency and a minimum DC current gain of 200 at 2 mA collector current make it a solid choice for low-power switching and amplification roles — think signal conditioning, relay drivers, or logic-level translation on a mixed-voltage board.

65 V Vceo and 100 mA Ic — the operating envelope

The 65 V collector-emitter breakdown gives you headroom for 24 V or even 48 V industrial rails, though you're limited to 100 mA continuous collector current. That combination — 65 V and 100 mA — is typical for the BC846 family and suits it for driving small relays, LEDs, or as a pre-driver for a larger MOSFET. The 330 mW power limit means you'll want to check the thermal derating if you're running near the current limit at elevated ambient temperatures; in a SOT-23 package, that's a practical constraint.

Gain and frequency — what the 250 MHz fT means

With a minimum hFE of 200 at 2 mA and 5 V, this transistor offers strong gain for a small-signal device, which is useful when the driving source is weak — a microcontroller GPIO pin, for instance. The 250 MHz transition frequency means it can handle switching up into the low-MHz range, so it's fine for PWM dimming or basic oscillator circuits, though it's not a dedicated RF transistor. The 15 nA maximum collector cutoff current is low enough not to leak into your bias network at room temperature.

If you're qualifying it for a new design, you're not picking a part that's about to vanish.

Frequently asked questions

What is the maximum collector current of BC846BB5000?

The maximum continuous collector current (Ic) is 100 mA. The collector-emitter breakdown voltage is 65 V, and the device is rated for a maximum power dissipation of 330 mW.