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Infineon Technologies BC817K25WE6327HTSA1 — Discrete Semiconductors
Infineon Technologies

Infineon BC817K25WE6327HTSA1 NPN Transistor, 45V, 500mA

MPNBC817K25WE6327HTSA1
Obsolete

Infineon BC817K25WE6327HTSA1 NPN general-purpose transistor, 45 V Vceo, 500 mA Ic, 170 MHz fT, hFE 160 at 100 mA, 250 mW, SC-70 SOT-323 package.

BC817K25WE6327HTSA1 datasheet
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Specifications

BC817K25WE6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce160 @ 100mA, 1V
Power - max250 mW
Frequency170MHz
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA

Product details

The Infineon BC817K25WE6327HTSA1 is a general-purpose NPN bipolar junction transistor in the compact SC-70 (SOT-323) surface-mount package. It is designed for low-to-medium current switching and amplification tasks where board space is tight. With a 45 V collector-emitter breakdown voltage and a 500 mA continuous collector current rating, it can handle common 12 V and 24 V rail switching, relay and solenoid drivers, and signal-level preamplifier stages. The 170 MHz transition frequency means it can switch cleanly well into the low VHF range, suitable for DC-DC converter gate drive buffers or high-speed logic level translation.

The 45 V collector-emitter breakdown voltage (Vceo) gives you comfortable headroom on a 24 V supply rail, and the 500 mA continuous collector current (Ic) can drive a small relay, a medium-sized LED string, or the base of a larger power transistor. The DC current gain (hFE) is specified at a minimum of 160 when the collector is carrying 100 mA with 1 V across it — that means a base current of just over 600 µA can switch 100 mA, which is easy for a microcontroller GPIO or a 3.3 V logic output to source. The saturation voltage is 700 mV maximum at 50 mA base drive into 500 mA load, so the transistor will not waste much voltage when fully turned on.

Obsolete — sourcing reality for BC817K25WE6327HTSA1

This exact suffix variant (BC817K25WE6327HTSA1) is listed as obsolete by Infineon.

Frequently asked questions

What is the replacement for BC817K25WE6327HTSA1?

Infineon does not list a direct successor order code for this obsolete variant. The closest functional replacement is another BC817 family member in the SC-70 (SOT-323) package with a similar gain group, such as the BC817K-25 or BC817K-40 series, but verify the exact hFE range and suffix against your design's requirements. For a pin-compatible alternative from another manufacturer, the ON Semiconductor BC817-25LT1G in SOT-23 is a common cross, though the package is larger.

What are the specifications of BC817K25WE6327HTSA1?

It is an NPN transistor with a 45 V Vceo breakdown, 500 mA continuous collector current, 250 mW maximum power dissipation, a minimum DC current gain (hFE) of 160 at 100 mA, a transition frequency of 170 MHz, and a saturation voltage of 700 mV at 500 mA.