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Infineon Technologies BC817K25E6327HTSA1 — Discrete Semiconductors

Infineon BC817K25E6327HTSA1 NPN Transistor, 45V 500mA SOT-23

MPNBC817K25E6327HTSA1
Last Buy

Infineon BC817K25E6327HTSA1 NPN general-purpose transistor, 45 V Vce, 500 mA Ic, 170 MHz fT, 160 min hFE at 100 mA, SOT-23-3 surface-mount package, 500 mW power dissipation.

$0.3600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC817K25E6327HTSA1 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce160 @ 100mA, 1V
Power - max500 mW
Frequency - transition170MHz
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA

Product details

What this NPN transistor does in a design

The Infineon BC817K25E6327HTSA1 is a general-purpose NPN bipolar junction transistor in a small SOT-23-3 surface-mount package. It handles collector currents up to 500 mA and blocks up to 45 V, making it a workhorse for low-to-medium power switching and linear amplification in compact PCB layouts. With a minimum DC current gain (hFE) of 160 at 100 mA collector current and 1 V Vce, the base drive requirement stays modest — a few milliamps from a microcontroller GPIO or logic gate can saturate the transistor for driving relays, LEDs, small solenoids, or signal-level loads. The 170 MHz transition frequency (fT) places it firmly in the general-purpose switching category — fast enough for PWM dimming, relay coil suppression, and low-speed logic-level translation, but not intended for RF amplifier stages above VHF.

45 V Vce and 500 mA Ic — the operating envelope

The 45 V collector-emitter breakdown voltage gives headroom for 12 V and 24 V industrial supply rails, with margin for inductive flyback spikes when driving relay coils or small motors. The 500 mA continuous collector current rating covers most signal-level loads; for higher current, step up to a medium-power transistor like the BC639 or a small-signal MOSFET. Maximum power dissipation is 500 mW in the SOT-23 package — derate this for ambient temperatures above 25 °C. At 150 °C junction temperature (TJ), the safe operating area shrinks; a quick thermal check: at 100 mA and 2 V Vce (200 mW), the junction stays well within limits in normal room-temperature use. Vce saturation is specified at 700 mV maximum with 50 mA base current and 500 mA collector current — meaning the transistor can saturate hard enough to keep dissipation low in switching applications.

Procurement teams should treat this as a time-limited sourcing event: secure lifetime buy quantities or qualify a pin-compatible replacement before the last-time-buy deadline passes. The base product number is BC817, a widely used NPN transistor family with multiple gain-group and package variants. Verify the exact hFE bin and package marking with your Infineon distributor.

Frequently asked questions

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