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Infineon Technologies BC817K-40E6327 — Discrete Semiconductors

BC817K-40E6327 Infineon NPN Transistor, AEC-Q101, 45 V

MPNBC817K-40E6327
Active

Infineon BC817K-40E6327 NPN transistor, Automotive AEC-Q101 series, 45 V VCEO, 500 mA IC, hFE 250 min at 100 mA, 170 MHz transition frequency, 500 mW power dissipation, SOT-23-3 package.

$0.3800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BC817K-40E6327 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
MountingSurface Mount
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce250 @ 100mA, 1V
Power - max500 mW
Frequency - transition170MHz
Operating temperature150°C(TJ)
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA

Product details

Automotive AEC-Q101 NPN — why the K-40 variant exists

The BC817K-40E6327 is Infineon's AEC-Q101 qualified version of the general-purpose BC817-40 NPN transistor. The 'K' suffix signals the automotive release: this part ships with full PPAP documentation and is traceable to an automotive-grade production line. Rated for 45 V collector-emitter breakdown and 500 mA continuous collector current, it handles relay drivers, solenoid valves, and logic-level interface circuits common in automotive body electronics and engine-management modules. The 170 MHz transition frequency is fast enough for PWM switching up to several hundred kilohertz. Maximum power dissipation is 500 mW, and the junction temperature rating reaches 150 °C — necessary for under-hood ambient conditions where the part may see sustained 85 to 105 °C underhood air.

hFE = 250 minimum at 100 mA — gain margin for saturated switching

The '40' gain bin means DC current gain is guaranteed at a minimum of 250 at 100 mA, 1 V VCE. This is the most important number for the design engineer sizing the base resistor: a 10 mA base drive into a 500 mA load gives a forced beta of 50, well within the saturation rating. At lower collector currents the hFE typically rises, so the same base drive margin holds for lighter loads. The 100 nA maximum collector cutoff current ensures negligible leakage at high temperature, which matters when the transistor drives a load that must stay off during key-off or standby.

Package and footprint: SOT-23-3 (PG-SOT23)

Housed in a standard SOT-23-3 package (Infineon code PG-SOT23), the BC817K-40E6327 is a drop-in footprint match for any BC817-series transistor. The surface-mount package is rated for 500 mW total power — derate for ambient temperature above 25 °C per the thermal resistance curve in the datasheet.

Listed as Active by Infineon.

Frequently asked questions

Is BC817K-40E6327 suitable for automotive applications?

Yes. It is listed under the Automotive, AEC-Q101 series, meaning it is qualified to the AEC-Q101 stress test standard for discrete semiconductors used in automotive electronics. This includes the PPAP documentation package that OEM auditors require.

What is the exact hFE range of BC817K-40E6327 and how does it vary with current?

The '40' gain bin specifies a minimum DC current gain of 250 at 100 mA collector current and 1 V VCE. The datasheet typical curves show hFE peaks in the 100–200 mA region and rolls off above 300 mA. At lower currents (1–10 mA) the gain typically exceeds 400.

Can I use BC817K-40E6327 as a direct replacement for BC817-40?

Yes, the BC817K-40E6327 is pin-compatible and electrically identical to the standard BC817-40. The only difference is the AEC-Q101 automotive qualification and the associated PPAP documentation.

Is BC817K-40E6327 RoHS and lead-free compliant?

Infineon's standard E6327 reel suffix indicates a lead-free, RoHS-compliant finish suitable for lead-free reflow profiles. The part is listed as Bulk packaging, which is the standard reel or ammo-pack form factor.