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Infineon Technologies BC817-40E6433 — Discrete Semiconductors

BC817-40E6433 NPN Transistor, AEC-Q101, 45V, 500mA, SOT-23

MPNBC817-40E6433
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Infineon BC817-40E6433 NPN transistor, Automotive AEC-Q101 series, 45 V Vce, 500 mA Ic, hFE 250 min, 170 MHz fT, SOT-23 surface mount, 150°C junction.

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Specifications

BC817-40E6433 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce250 @ 100mA, 1V
Power - max500 mW
Frequency170MHz
Operating temperature150°C(TJ)
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA

Product details

Automotive-grade NPN in a SOT-23 footprint

The Infineon BC817-40E6433 is an NPN general-purpose amplifier and switching transistor rated for automotive and industrial environments, carrying AEC-Q101 qualification. Packaged in the industry-standard SOT-23-3 (PG-SOT23) surface-mount case, it delivers a 45 V collector-emitter breakdown and a 500 mA continuous collector current ceiling. The -40E suffix guarantees a minimum DC current gain (hFE) of 250 at 100 mA collector current — a tight bin that gives the designer predictable saturation margin across the full temperature range.

The 250 minimum hFE at 100 mA, 1 Vce means the base drive requirement is low: for a 100 mA load, you need less than 0.4 mA into the base to keep the transistor in the linear region. That simplifies the drive stage — a GPIO from a 3.3 V MCU can often drive it directly through a single resistor. When switching near the 500 mA maximum, the Vce saturation spec of 700 mV max at 50 mA base drive / 500 mA collector current tells you the on-state power dissipation: at 500 mA, figure about 350 mW worst-case, leaving 150 mW headroom before hitting the 500 mW package power limit. That margin shrinks at elevated ambient — derate against the 150°C junction maximum.

AEC-Q101 — what the automotive grade buys you

The AEC-Q101 qualification means this part has passed the Automotive Electronics Council's stress tests for discrete semiconductors: high-temperature reverse bias, temperature cycling, autoclave, and solder heat resistance. For a procurement decision, that certification lifts the part above the commercial BC817-40 variant — it is the version to specify when the BOM requires a PPAP submission or when the end product ships into under-hood or chassis-domain electronics. The 150°C junction temperature rating supports 125°C ambient operation with adequate derating for self-heating.

Lifecycle and sourcing posture

This is a standard catalog transistor that moves through both authorized distribution and the independent spot market. For production runs, qualify it into the BOM with confidence; the AEC-Q101 suffix is the automotive-screened variant, so confirm your tier's paperwork requirements at quote time.

Frequently asked questions

Is BC817-40E6433 AEC-Q101 qualified?

Yes, the BC817-40E6433 is listed under the Automotive, AEC-Q101 series, meaning it has passed the AEC-Q101 stress tests for automotive-grade discrete semiconductors. This qualification covers high-temperature reverse bias, temperature cycling, autoclave, and solder heat resistance, making it suitable for automotive and high-reliability applications.

What is the DC current gain (hFE) of BC817-40E6433 at 100 mA?

The minimum DC current gain (hFE) is 250 at a collector current of 100 mA with a collector-emitter voltage of 1 V. This tight bin ensures predictable drive requirements and saturation behavior across temperature.

What is the maximum operating temperature of BC817-40E6433?

The maximum operating junction temperature is 150°C. This is the junction temperature limit, not the ambient — derate the power dissipation (500 mW package limit) against the thermal resistance of the SOT-23 package to stay within the 150°C ceiling.