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Infineon Technologies BC817-16B5003 — Discrete Semiconductors

BC817-16B5003 NPN Transistor, 500 mA, 45 V, SOT-23-3, Active

MPNBC817-16B5003
Active

Infineon BC817-16B5003 NPN transistor, 45 V Vce, 500 mA Ic, 170 MHz fT, 500 mW, SOT-23-3 package, Bulk.

$0.0200Ref. price · indicative, final on quote
Infineon Technologies BC817-16B5003 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BC817-16B5003 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 100mA, 1V
Power - max500 mW
Frequency - transition170MHz
Operating temperature150°C(TJ)
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA

Product details

NPN transistor for general-purpose switching and amplification

The 500 mW power dissipation limit and 150°C junction temperature allow operation in compact, thermally constrained boards.

Ratings that define the load and voltage headroom

The 500 mA collector current is the absolute maximum — continuous operation at 300 mA to 400 mA leaves headroom for inrush and ripple. Saturation voltage is 700 mV at 50 mA base drive and 500 mA collector current, so confirm base drive current for the load you are switching. The 500 mW power limit in the SOT-23-3 package means the junction temperature climbs fast above 300 mA continuous. If the board runs hot or the transistor is near other heat sources, measure the actual dissipation or step up to a larger package variant.

Frequently asked questions

What are the exact specifications of BC817-16B5003?

The BC817-16B5003 is an NPN transistor rated for 45 V collector-emitter breakdown, 500 mA collector current, 500 mW power dissipation, and a transition frequency of 170 MHz. It comes in a SOT-23-3 surface-mount package and operates up to 150°C junction temperature.

How does BC817-16B5003 compare to BC817-16B?

The BC817-16B5003 and BC817-16B share the same NPN transistor die with identical electrical ratings — 45 V Vce, 500 mA Ic, 170 MHz fT, and 500 mW power. The difference is packaging: the -5003 suffix indicates a specific Infineon reel or bulk packaging variant, not a change in silicon. Both are functionally interchangeable in the same SOT-23-3 footprint.