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Infineon Technologies BC817-16B5000 — Discrete Semiconductors
Infineon Technologies

Infineon BC817-16B5000 NPN Transistor, 45 V, 500 mA, SOT-23

MPNBC817-16B5000
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Infineon BC817-16B5000 NPN general-purpose transistor, 45 V VCEO, 500 mA Ic, hFE min 100 at 100 mA, 170 MHz fT, 500 mW, SOT-23-3 package, PG-SOT23.

$0.0200Ref. price · indicative, final on quote
BC817-16B5000 datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BC817-16B5000 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 100mA, 1V
Power - max500 mW
Frequency170MHz
Operating temperature150°C(TJ)
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA

Product details

General-purpose NPN for 12 V and 24 V industrial rails

The Infineon BC817-16B5000 is an NPN epitaxial planar transistor in a SOT-23-3 package, rated for 45 V collector-emitter breakdown and 500 mA continuous collector current. With a minimum DC current gain (hFE) of 100 at 100 mA collector current and 1 V VCE, it is sized for general-purpose switching and linear amplification in 12 V and 24 V industrial control, motor pre-drive, and signal conditioning circuits. The 170 MHz transition frequency keeps switching losses low in PWM applications up to several hundred kilohertz.

The hFE minimum of 100 at 100 mA means the base current needed to saturate a 100 mA load is at most 1 mA — a standard logic-level or MCU GPIO pin can drive it directly through a series resistor. The 700 mV VCE(sat) maximum at 50 mA base and 500 mA collector is the conduction loss floor; at 500 mA the transistor dissipates 350 mW in saturation, leaving 150 mW headroom before the 500 mW absolute maximum at the 150 °C junction temperature.

Frequently asked questions

What is the hFE (DC current gain) of BC817-16B5000?

The BC817-16B5000 has a minimum DC current gain (hFE) of 100 at a collector current of 100 mA and a collector-emitter voltage of 1 V. This gain specification is the key parameter for sizing the base-drive resistor in switching or linear applications.

Can BC817-16B5000 replace BC817-16?

The BC817-16B5000 is functionally equivalent to the general BC817-16 grade — both share the same 45 V VCEO, 500 mA Ic, and hFE bin (100 to 250 at 100 mA). The suffix differences typically indicate packaging or reel quantity variants, not a change in electrical characteristics. Verify the specific marking code on the part to confirm the gain group.