PNP general-purpose transistor in SOT-323 — 45 V, 500 mA
The Infineon BC80725WE6327BTSA1 is a PNP epitaxial planar transistor in the BC807 series, housed in a PG-SOT323 (SC-70) surface-mount package. It is rated for a collector-emitter breakdown voltage of 45 V and a continuous collector current of 500 mA, with a power dissipation ceiling of 250 mW. The 200 MHz transition frequency makes it suitable for general-purpose switching and linear amplification up to medium frequencies. Typical applications include load switching, driver stages, and signal amplification in compact, low-power circuits where board space is tight.
Infineon lists the BC80725WE6327BTSA1 as Obsolete. No official successor is recorded in the lifecycle entry. If the design can tolerate a package or pinout change, a functionally equivalent PNP in SOT-323 with a 45 V Vce and 500 mA Ic rating is the parametric match to search for.
The 45 V collector-emitter breakdown voltage sets the maximum rail the transistor can block when off — stay inside this for any switching or linear application. The 500 mA continuous collector current is the DC current limit; peak pulsed current can be higher but is not specified here. Minimum DC current gain of 160 at 100 mA collector current and 1 Vce gives the designer a guaranteed drive margin: a base current of about 3 mA is enough to saturate the transistor at 500 mA load. The 700 mV Vce saturation at 50 mA base and 500 mA collector is the on-state voltage drop — expect about 350 mW conduction loss at full rated current, which is within the 250 mW package dissipation limit only if duty cycle is low or ambient is modest. The 100 nA collector cutoff leakage at 25 °C is tight enough for most low-power battery circuits.