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Infineon Technologies BC80725E6327HTSA1 — Discrete Semiconductors

BC80725E6327HTSA1 PNP Transistor, 45V 500mA 200MHz SOT-23-3

MPNBC80725E6327HTSA1
Active

Infineon BC80725E6327HTSA1 PNP general-purpose transistor, 45 V Vce, 500 mA Ic, 200 MHz fT, hFE 160-250 at 100 mA, SOT-23-3 package, 330 mW power dissipation.

$0.0300Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BC80725E6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce160 @ 100mA, 1V
Power - max330 mW
Frequency200MHz
Operating temperature150°C(TJ)
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA

Product details

The Infineon BC80725E6327HTSA1 is a PNP epitaxial silicon transistor in a standard SOT-23-3 surface-mount package. It is rated for a collector-emitter breakdown voltage of 45 V and a continuous collector current of 500 mA, with a transition frequency of 200 MHz. The DC current gain (hFE) is a minimum of 160 at 100 mA collector current and 1 V Vce, which puts it in the '25' gain group of the BC807 family.

Package and mounting

The 500 mA collector current rating is the hard ceiling for the load this transistor can switch continuously. If your design pulls 400 mA steady, you have 20% headroom — comfortable. At 500 mA the Vce saturation is 700 mV max with 50 mA base drive, so the on-state power dissipation is about 350 mW, which bumps against the 330 mW package limit. That means at full rated current you need to keep the duty cycle low or add thermal relief in the layout. The 200 MHz transition frequency tells you it can switch at a few megahertz without significant gain roll-off, fine for PWM dimming or low-speed DC-DC converters.

Package and field-replaceability

The SOT-23-3 package (also known as TO-236-3 or SC-59) is about as field-service-friendly as a surface-mount part gets. With a standard soldering iron and tweezers you can swap it on site — no hot-air station required if the board has accessible pads. The PG-SOT23 supplier package designation is Infineon's own marking; the footprint matches any generic SOT-23-3 land pattern. Orientation is unambiguous: the package has a flat side and the pin 1 identifier is marked on the top.

Frequently asked questions

What is the hFE of BC80725E6327HTSA1 at 100 mA?

The '25' gain group typically spans 160 to 250 across the production spread.

What is the Vce saturation of BC80725E6327HTSA1?

The Vce saturation is 700 mV maximum at 50 mA base current and 500 mA collector current. At lower currents the saturation voltage drops proportionally.

What is the difference between BC80725 and BC807-16?

The BC80725 and BC807-16 are the same base transistor (45 V, 500 mA, 200 MHz) but sorted into different hFE gain groups. The BC80725 has a minimum hFE of 160 at 100 mA, while the BC807-16 has a minimum hFE of 100 at the same test condition. The pinout and package are identical, so they are drop-in replacements if the gain specification allows.

Is BC80725E6327HTSA1 RoHS compliant?

The product status is listed as active, and Infineon's BC807 series is generally RoHS-compliant and halogen-free. Verify the specific date code on the reel label for the compliance declaration.