Skip to main content
Infineon Technologies BC80740E6327 — Discrete Semiconductors

BC80740E6327 PNP Transistor, 45 V, 500 mA, SOT-23-3

MPNBC80740E6327
Active

Infineon BC80740E6327 PNP transistor, 45 V VCEO, 500 mA IC, 250 hFE min, 200 MHz fT, 330 mW, SOT-23-3 package, surface mount.

StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BC80740E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce250 @ 100mA, 1V
Power - max330 mW
Frequency200MHz
Operating temperature150°C(TJ)
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA

Product details

PNP switching transistor — 45 V, 500 mA in a SOT-23-3

The Infineon BC80740E6327 is a PNP epitaxial planar transistor in the BC807 series, housed in a PG-SOT23-3-11 package. It is a general-purpose switching and amplification device rated for 45 V collector-emitter breakdown and 500 mA continuous collector current. The 330 mW power dissipation limit and 150°C junction temperature rating suit it for moderate-load applications in industrial control, power management, and signal conditioning circuits where a small surface-mount PNP is needed.

What the 250 hFE minimum gain means for your drive circuit

The DC current gain is specified at 250 minimum when tested at 100 mA collector current with 1 V VCE. This relatively high gain means the base drive current required to saturate the transistor is low — for a 500 mA load, the base current needed is under 2 mA even at the minimum gain. That keeps the upstream driver stage simple and reduces component count in applications like relay drivers, solenoid drivers, and low-side switches.

Switching speed and saturation voltage

With a 200 MHz transition frequency, this transistor can handle moderate-speed switching in DC-DC converters and signal amplification up to several MHz. The VCE saturation voltage is specified at 700 mV maximum at 50 mA base current and 500 mA collector current — a typical figure for a general-purpose PNP in this current range. The 100 nA maximum collector cutoff current (ICBO) keeps leakage negligible in high-impedance circuits.

Package and footprint — SOT-23-3

The BC80740E6327 comes in the industry-standard SOT-23-3 surface-mount package (Infineon code PG-SOT23-3-11). The three-pin footprint is common across the BC807/BC817 family and many other small-signal transistors, making it straightforward to swap in during layout or BOM revision. The Bulk shipping form means it arrives in tubes or trays, not tape-and-reel — factor that into your pick-and-place setup if you are ordering for automated assembly.

Lifecycle and production status

Infineon lists the BC80740E6327 with an Active product status. For dual-sourcing resilience, the BC807 series has multiple hFE-grade variants (BC807-16, BC807-25, BC807-40) that share the same SOT-23-3 footprint and electrical ratings, differing only in the gain bin.

Frequently asked questions

What is the closest pin-compatible alternative to BC80740E6327?

Within the BC807 family, the BC807-16 and BC807-25 variants are pin-compatible SOT-23-3 PNP transistors with the same 45 V / 500 mA ratings. The difference is the hFE gain bin: BC807-16 has a minimum gain of 100, BC807-25 has 160, and BC807-40 (this part) has 250. If your circuit needs the higher gain, stick with the BC80740E6327; otherwise the lower-gain bins may be more readily available.