The Infineon BC807-25WE6327 is a general-purpose PNP bipolar transistor in the standard SOT-23-3 footprint. It is rated for 45 V collector-emitter breakdown and 500 mA continuous collector current, with a minimum DC current gain of 160 at 100 mA collector current and 1 V Vce. The 250 mW power dissipation limit and 150°C junction temperature rating suit it for low-to-moderate power switching and linear applications in industrial controls, power-supply housekeeping, and signal conditioning where a PNP pull-down or current sink is needed.
Gain at the working point — 160 minimum hFE at 100 mA
The hFE of 160 minimum at 100 mA and 1 V Vce means the transistor needs only about 0.6 mA base drive to saturate a 100 mA load, which is easy to source from a logic gate or a microcontroller output pin. At the full 500 mA the gain will drop, but the 700 mV Vce saturation at 50 mA base current and 500 mA collector current gives a reasonable on-state voltage for a PNP of this size.
Package and footprint — SOT-23-3, field-swappable
The BC807-25WE6327 comes in the industry-standard SOT-23-3 package (Infineon calls it PG-SOT23-3-11). No lab bench needed to swap it on site — a fine-tip iron and steady hands are enough. The bulk shipping form means it arrives loose in a bag; if your pick-and-place line expects tape, note the packaging difference.
Lifecycle — active, no end-of-life concern
Infineon lists the BC807-25WE6327 as an active product.