The Infineon BC80725E6327 is a PNP bipolar junction transistor in a surface-mount SOT-23-3 package. It's a general-purpose switching and amplification device rated for 500 mA collector current and 45 V collector-emitter breakdown voltage, with a minimum DC current gain (hFE) of 160 at 100 mA, 1 V. The 200 MHz transition frequency suits moderate-speed switching in power management, load drivers, and signal conditioning circuits.
The 500 mA collector current limit sets the maximum load this transistor can switch continuously — enough for driving relays, small solenoids, or LED strings, but not for motor windings or high-current loads. The 45 V VCEO breakdown means it can handle 24 V or 36 V rails with margin, but not 48 V systems. The 330 mW power dissipation limits how much current it can carry at higher VCE drops; at 45 V and 100 mA, dissipation is already 4.5 W, so the part must operate in saturation or use pulsed duty to stay within the 330 mW ceiling. The 700 mV VCE saturation at 50 mA base, 500 mA collector is typical for a PNP of this size — expect about 350 mW dissipation at full current in saturation, which is within the package limit but leaves little headroom for ambient above 85 °C.
Package and footprint
Housed in a standard SOT-23-3 (TO-236-3 / SC-59) package, the BC80725E6327 uses the Infineon PG-SOT23-3-11 variant. No thermal pad or exposed paddle; all heat dissipates through the leads and PCB copper. For 330 mW, a minimal copper land pattern is adequate, but if you push near the limit, add a short trace to the collector pad to spread heat.
Lifecycle and sourcing
The closest functional alternate is the BC807-25E6327, which shares the same SOT-23-3 package and 500 mA / 45 V ratings; it is a direct second-source candidate for dual-sourcing resilience.