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Infineon Technologies BC 856S E6433 — Discrete Semiconductors

BC 856S E6433 Dual PNP Transistor, 65 V, 100 mA, SOT-363

MPNBC 856S E6433
End of Life

Infineon BC 856S E6433 dual PNP small-signal transistor, 65 V Vceo, 100 mA Ic, 250 MHz fT, SOT-363 package, Tape & Reel.

$0.2800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BC 856S E6433 specifications
ParameterValue
MountingSurface Mount
FET type2 PNP (Dual)
Voltage - collector emitter breakdown65V
Current - collector (Ic)100mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 5V
Power - max250mW
Frequency - transition250MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Vce saturation (Max) @ ib, ic650mV @ 5mA, 100mA

Product details

Dual PNP pair in a single SOT-363

The Infineon BC 856S E6433 integrates two matched PNP transistors in a single 6-pin SOT-363 package.

Gain and saturation — what the numbers mean

DC current gain (hFE) is guaranteed at a minimum of 200 at Ic = 2 mA and Vce = 5 V, which provides a predictable beta floor for biasing. The Vce(sat) is specified at 650 mV maximum at Ib = 5 mA and Ic = 100 mA — a typical figure for a small-signal PNP in saturation, useful when the transistor is used as a low-side switch or in a saturated output stage. Transition frequency is 250 MHz, making this pair suitable for switching and amplification up to the low-VHF range. Collector cutoff current is a maximum of 15 nA (ICBO), which keeps leakage negligible in high-impedance nodes.

The SOT-363 (PG-SOT363-PO) package is a 6-lead surface-mount outline with a 250 mW total power dissipation limit.

Frequently asked questions

What is the DC current gain (hFE) and Vce saturation of BC 856S?

Minimum hFE is 200 at Ic = 2 mA and Vce = 5 V. Maximum Vce(sat) is 650 mV at Ib = 5 mA and Ic = 100 mA.