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Infineon Technologies BC 856B E6433 — Discrete Semiconductors

Infineon BC 856B E6433 PNP Transistor, 65 V, 100 mA, 250 MHz

MPNBC 856B E6433
Obsolete

Infineon BC 856B E6433 PNP general-purpose transistor, 65 V VCEO, 100 mA Ic, 250 MHz fT, 330 mW, SOT-23-3 package, Tape & Reel.

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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BC 856B E6433 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP
Voltage - collector emitter breakdown65 V
Current - collector (Ic)100 mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce220 @ 2mA, 5V
Power - max330 mW
Frequency250MHz
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic650mV @ 5mA, 100mA

Product details

Obsolete — sourcing this PNP transistor now

The Infineon BC 856B E6433 is listed as obsolete by the manufacturer.

With a 65 V collector-emitter breakdown voltage and 100 mA maximum collector current, this transistor suits general-purpose switching and amplification in circuits up to about 48 V rails with derating. The 330 mW power limit in the SOT-23 package means continuous dissipation needs checking against the operating current and ambient temperature — at 25 °C ambient and 100 mA, VCE must stay under about 3.3 V to stay inside the power budget. The 250 MHz transition frequency gives enough bandwidth for audio amplifiers, signal conditioning, and moderate-speed switching up to a few MHz.

DC gain and saturation — the B-grade selection

The B-grade suffix selects a minimum DC current gain (hFE) of 220 at 2 mA collector current and 5 V VCE. This is the medium-gain bin in the BC 856 family, offering a good balance between consistent drive capability and low saturation voltage — 650 mV maximum at 5 mA base current and 100 mA collector current. The 15 nA maximum collector cutoff current (ICBO) keeps leakage low in high-impedance nodes, which matters for battery-powered or temperature-sensitive designs.

SOT-23 footprint and tape-and-reel delivery

The transistor comes in the standard TO-236-3 / SC-59 / SOT-23-3 surface-mount package, supplier device package PG-SOT23. The Tape & Reel (TR) packaging format suits automated pick-and-place assembly. The 150 °C maximum junction temperature rating allows operation in warm environments, but the 330 mW power limit in this small package means thermal design — not the junction temperature — is the practical constraint for continuous operation.

Frequently asked questions

What are the specifications of BC 856B E6433?

The BC 856B E6433 is a PNP general-purpose transistor with 65 V collector-emitter breakdown voltage, 100 mA maximum collector current, 250 MHz transition frequency, 330 mW maximum power dissipation, minimum DC current gain of 220 at 2 mA / 5 V, maximum saturation voltage of 650 mV at 5 mA base / 100 mA collector, and 15 nA maximum collector cutoff current. It comes in a SOT-23-3 surface-mount package rated for 150 °C junction temperature.