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Infineon Technologies BC 817-40 E6433 — Discrete Semiconductors

BC 817-40 E6433 NPN Transistor, 500 mA, 45 V, SOT-23

MPNBC 817-40 E6433
Obsolete

Infineon BC 817-40 E6433 NPN transistor, SOT-23, 500 mA collector current, 45 V Vce, 170 MHz transition frequency, 330 mW power dissipation.

$0.1700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC 817-40 E6433 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce250 @ 100mA, 1V
Power - max330 mW
Frequency - transition170MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA

Product details

The Infineon BC 817-40 E6433 is a general-purpose NPN bipolar junction transistor in a SOT-23 surface-mount package. It is rated for a collector current of 500 mA and a collector-emitter breakdown voltage of 45 V, with a DC current gain (hFE) of minimum 250 at 100 mA collector current and 1 V Vce. The transition frequency of 170 MHz supports switching and amplifier circuits up to the low-MHz range. Typical applications include load drivers, relay and solenoid drivers, and linear amplification stages in industrial control, consumer electronics, and telecom equipment where the SOT-23 footprint saves board area.

The 500 mA collector current and 45 V Vce breakdown cover many low-to-medium power switching and linear applications, but the SOT-23 package limits total power dissipation to 330 mW — so continuous current near the 500 mA limit needs a derating check against the thermal resistance of the board. The 170 MHz ft is adequate for audio-frequency amplifiers and moderate-speed switching (e.g., 1–10 MHz clock or PWM lines), but not for RF power stages. The 700 mV saturation voltage at 50 mA base current and 500 mA collector current is typical for a small-signal transistor; it means the device will dissipate about 350 mW when fully saturated at 500 mA — right at the package limit, so thermal margin is thin.

The BC 817-40 E6433 is listed as obsolete. Stock is finite and declining. For a BOM that still specifies this exact order code, the sourcing path is to locate remaining inventory through brokers or independent distributors, verify date-code consistency and marking authenticity, and qualify the lot against the original datasheet. No official replacement part is listed in the available lifecycle data, so a drop-in alternate must be identified by matching the SOT-23 footprint, NPN polarity, and the key parametric limits: 500 mA Ic, 45 V Vce, and hFE grade (the -40 suffix indicates a gain range of 250 to 600 at 100 mA).

Frequently asked questions

What is the replacement for BC 817-40 E6433?

No official replacement part number is recorded in the available lifecycle data. A functionally equivalent alternate would need to match the SOT-23 footprint, NPN polarity, 500 mA collector current, 45 V Vce, and the -40 gain grade (hFE 250–600 at 100 mA).

What are the specifications of BC 817-40 E6433?

It is an NPN transistor in a SOT-23 package, rated for 500 mA collector current, 45 V Vce breakdown, 330 mW power dissipation, 170 MHz transition frequency, and a DC current gain of minimum 250 at 100 mA and 1 V Vce. Saturation voltage is 700 mV at 50 mA base current and 500 mA collector current.

What is the difference between BC 817-40 and BC 817-25?

The -40 and -25 suffixes denote different DC current gain (hFE) grading. The BC 817-40 has a minimum hFE of 250 at 100 mA and 1 V Vce, while the BC 817-25 has a lower gain range. Both share the same SOT-23 package, 500 mA Ic, 45 V Vce, and 170 MHz ft. The choice depends on the gain needed for the circuit design.