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Infineon Technologies BC 817-25 E6433 — Discrete Semiconductors

BC 817-25 E6433 NPN Transistor, 500 mA, 45 V, SOT-23

MPNBC 817-25 E6433
Obsolete

Infineon BC 817-25 E6433 NPN transistor, 500 mA Ic, 45 V Vce, 170 MHz fT, hFE 160-400, SOT-23-3 package, 330 mW Pd, Tape & Reel.

$0.1700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC 817-25 E6433 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce160 @ 100mA, 1V
Power - max330 mW
Frequency - transition170MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA

Product details

NPN transistor in SOT-23 — 500 mA, 45 V, 170 MHz fT

The Infineon BC 817-25 E6433 is a general-purpose NPN bipolar junction transistor in a SOT-23-3 surface-mount package. The 170 MHz transition frequency keeps switching edges clean for sub-1 MHz PWM and audio-band amplification. The "25" gain group specifies a DC current gain (hFE) of 160 to 400 at 100 mA, 1 V, which gives consistent drive strength across reels. Saturation voltage is 700 mV maximum at 50 mA base current and 500 mA collector current — a reasonable Vce(sat) for a 500 mA device in this footprint. Maximum power dissipation is 330 mW, so derating is needed above 25 °C ambient if the transistor is used in continuous conduction.

Obsolete — plan for a last-time buy or second source

The BC 817-25 E6433 is marked obsolete by Infineon.

Package and temperature — SOT-23, 150 °C junction

The transistor is supplied in a TO-236-3 / SC-59 / SOT-23-3 package, with the Infineon-specific PG-SOT23 designation. It is surface-mount only, solders to a standard SOT-23 land pattern. The junction temperature rating is 150 °C, which covers most industrial and automotive under-hood environments when derated for power dissipation. The 100 nA collector cutoff current (ICBO) at 25 °C is typical for a small-signal NPN; expect it to rise with temperature, but it stays under a microamp for most bias networks.

Frequently asked questions

Is BC 817-25 E6433 obsolete?

Yes, Infineon lists the BC 817-25 E6433 as obsolete. There is no official successor from Infineon, but the base BC 817-25 transistor is still available from other manufacturers (e.g., Nexperia, onsemi) in the same SOT-23 package.

What are the specifications of BC 817-25 E6433?

It is an NPN transistor with a maximum collector current of 500 mA, collector-emitter breakdown voltage of 45 V, transition frequency of 170 MHz, DC current gain (hFE) of 160 to 400 at 100 mA / 1 V, saturation voltage of 700 mV max at 50 mA base / 500 mA collector, and maximum power dissipation of 330 mW. It comes in a SOT-23-3 surface-mount package rated for a junction temperature of 150 °C.