Infineon BC 807-25 E6433 PNP transistor, 500 mA collector current, 45 V Vce, 200 MHz fT, 160 hFE at 100 mA, SOT-23 package, 330 mW power dissipation, obsolete.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | PNP |
| Voltage - collector emitter breakdown | 45 V |
| Current - collector (Ic) | 500 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 160 @ 100mA, 1V |
| Power - max | 330 mW |
| Frequency - transition | 200MHz |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vce saturation (Max) @ ib, ic | 700mV @ 50mA, 500mA |
The Infineon BC 807-25 E6433 is a PNP bipolar junction transistor in a SOT-23 package (PG-SOT23, also fits TO-236-3 and SC-59 footprints). It handles a collector current up to 500 mA and blocks a collector-emitter voltage of 45 V, with a transition frequency of 200 MHz.
Maximum power dissipation is 330 mW. Vce saturation is 700 mV at 50 mA base current and 500 mA collector current.
There is no official replacement listed by Infineon. For a functional equivalent, look for a PNP transistor in SOT-23 rated for at least 500 mA collector current, 45 V Vce, and a transition frequency around 200 MHz. Many manufacturers offer parts with similar specs — requalification will be needed.
We source this obsolete part through independent distribution. Submit an RFQ and we will confirm availability and current pricing at quote time.