PNP small-signal transistor for general-purpose switching and amplification
The Infineon BC80716E6327 is a PNP bipolar junction transistor in the standard SOT-23-3 surface-mount package (PG-SOT23-3-11). It is rated for a collector-emitter breakdown voltage of 45 V and a continuous collector current of 500 mA, with a power dissipation ceiling of 330 mW. The 200 MHz transition frequency makes it suitable for moderate-speed switching and linear amplification up to low-VHF frequencies.
Vce(sat) is specified at 700 mV maximum with a base current of 50 mA driving a collector current of 500 mA. That saturation voltage is the key loss term in a low-side switch: at full rated current the transistor drops about 0.7 V, so the power dissipated in saturation is roughly 350 mW — right at the package limit, meaning a switch running at 500 mA needs good PCB copper to keep the junction below 150 °C. DC current gain (hFE) is a minimum of 100 at 100 mA, 1 V, which gives plenty of base-drive margin for a microcontroller GPIO driving the base through a few kilo-ohms.