Last Buy — sourcing route for an established BOM line
Infineon has placed this BAV70SH6827XTSA1 on Last Buy status — the manufacturer's final production window is closing, and once inventory is exhausted the part will be discontinued. For an existing BOM that already qualifies this dual diode, the procurement path is through independent distribution channels that hold end-of-life stock.
Switching performance — 4 ns trr in a dual common-cathode layout
The 4 ns reverse recovery time (trr) places this diode squarely in the fast-switching class — suitable for high-frequency rectification, snubber clamping, and signal steering where the recovery tail would otherwise add switching loss or noise injection. The dual common-cathode configuration pairs two diodes in a single PG-SOT363-6-1 package, saving board space compared to two discrete SOD-323 or SOT-23 devices. Each diode handles 200 mA average rectified current (Io) with a forward voltage drop of 1.25 V max at 150 mA. Reverse leakage is 150 nA at 70 V, which matters for low-power hold-up circuits where leakage current drains a storage capacitor.
Voltage and temperature headroom
Rated for 80 V reverse voltage (Vr max) and a junction temperature up to 150°C, the BAV70SH6827XTSA1 covers 48 V and 60 V bus rails with margin for transients. The 150°C Tj(max) is typical for standard switching diodes — derate the forward current above 100°C ambient per the thermal resistance of the SOT-363 footprint.