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Infineon Technologies BAV 99 E6433 — Discrete Semiconductors

BAV 99 E6433 dual series switching diode, 80 V, 4 ns trr

MPNBAV 99 E6433
Obsolete

Infineon BAV 99 E6433, dual series switching diode, 80 V Vr(max), 200 mA average rectified current, 4 ns trr, SOT-23-3 package, surface mount.

$0.3486Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAV 99 E6433 specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr150 nA @ 70 V
Current - average rectified (Io) (per diode)200mA (DC)
Operating temperature - junction150°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR)
TechnologyStandard
CaseTO-236-3, SC-59, SOT-23-3
Diode configuration1 Pair Series Connection
Reverse recovery time4 ns

Product details

The Infineon BAV 99 E6433 is a dual series-connected switching diode in a standard SOT-23-3 surface-mount package. The 4 ns reverse recovery time makes it suited for high-speed switching, clamping, and logic-level steering applications where fast turn-off is needed — think relay coil suppression, flyback snubbing on a 24 V industrial bus, or protecting a comparator input from overvoltage transients. The SOT-23 footprint is a common board-level component that reflow-solders without special handling; the PG-SOT23 supplier package variant is the Infineon-specific marking.

The BAV 99 E6433 carries an official lifecycle status of Obsolete.

The 80 V reverse voltage rating sets the maximum DC or repetitive peak reverse voltage the diode can block — adequate for 48 V telecom rails or 24 V industrial supplies with margin, but not for 120 V AC rectification. The 4 ns reverse recovery time is the headline switching spec: it determines how fast the diode can transition from forward conduction to reverse blocking, directly affecting switching losses in a 100 kHz+ converter or the clamping bandwidth in a high-speed data line protector. Forward voltage drop is 1.25 V at 150 mA — typical for a small-signal silicon diode, so power dissipation at 200 mA continuous in free air on a standard PCB will be about 250 mW, which the SOT-23 package handles with reasonable junction temperature margin up to 150°C.

Frequently asked questions

What is the replacement for BAV 99 E6433?

No single Infineon successor order code is listed for the E6433 suffix variant. The base BAV 99 dual series diode is a standard industry type produced by multiple manufacturers (e.g., Nexperia, ON Semiconductor, Diodes Inc) in SOT-23. Any functionally equivalent BAV99 in the same package and with equal or better Vr and trr ratings can serve as a drop-in replacement — verify pin 1 orientation and marking before committing the BOM.