RF Schottky for detector and mixer front-ends
The Infineon BAT6302VH6327XTSA1 is a single RF Schottky diode in a SC-79/SOD-523 package, rated for a peak reverse voltage of 3 V and a maximum forward current of 100 mA. Its junction capacitance of 0.85 pF at 0.2 V bias makes it suited for RF detection, mixing, and clamping in circuits up to several gigahertz. The 100 mW power dissipation limit defines the thermal budget for small-signal applications.
3 V reverse voltage — the signal ceiling
The 3 V peak reverse voltage sets the maximum RF envelope the diode can block before it conducts in reverse. In a zero-bias detector circuit, exceeding this level forward-biases the junction and clips the output. For a mixer or multiplier stage, the local-oscillator swing must stay within this limit to avoid distortion.
0.85 pF capacitance — bandwidth enabler
At 0.2 V bias and 1 MHz, the junction capacitance measures 0.85 pF. This sub-picofarad value keeps the capacitive reactance high at RF frequencies.
100 mA / 100 mW — small-signal thermal ceiling
The maximum forward current of 100 mA and power dissipation of 100 mW reflect the small SC-79/SOD-523 package. In RF detection the diode typically operates at microamp levels, so the thermal margin is generous. But if the part is used as a low-voltage clamp or ESD protection element, the continuous power must be derated against ambient temperature and PCB copper area.
Package and footprint
The SC-79 / SOD-523 package (supplier device package PG-SC79-2) is a two-pin surface-mount case. Tape & Reel and Cut Tape options are available.
Lifecycle and compliance
It is RoHS3 compliant. For BOM planning, this means no imminent last-time-buy risk and full regulatory acceptance for EU and global markets.