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Infineon Technologies BAT60BE6327HTSA1 — Discrete Semiconductors

Infineon BAT60BE6327HTSA1 Schottky Diode, 3 A, 10 V, SOD-323

MPNBAT60BE6327HTSA1
Active

Infineon BAT60BE6327HTSA1 Schottky diode, 10 V reverse voltage, 3 A average rectified current, SOD-323 surface-mount package, fast recovery.

$0.4400Ref. price · indicative, final on quote
PackagingSC-76, SOD-323
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BAT60BE6327HTSA1 specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)10 V
Voltage - forward (Vf) (Max) @ if600 mV @ 1 A
Current - reverse leakage @ vr25 µA @ 8 V
Current - average rectified3A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologySchottky
CaseSC-76, SOD-323
Capacitance @ vr,30pF @ 5V, 1MHz

Product details

Forward drop and switching speed

The BAT60BE6327HTSA1: Forward voltage is 600 mV maximum at 1 A forward current — the Schottky barrier keeps conduction losses low in a 3 A rectifier or OR-ing application. The fast recovery speed (≤500 ns at >200 mA) means it handles switching edges cleanly in a low-voltage DC-DC converter output stage.

Leakage and capacitance at the junction

Reverse leakage is 25 µA at 8 V reverse bias — typical for a 10 V Schottky at this current rating. Junction capacitance measures 30 pF at 5 V and 1 MHz, which keeps the switching node ringing under control in a 500 kHz boost converter.

Package and board integration

The SOD-323 package (SC-76) is a two-lead surface-mount footprint with a small 2.5 mm × 1.2 mm body — it fits tight layouts on a 4-layer board where the cathode tab is soldered to the copper pour for thermal relief. The supplier device package is PG-SOD323-3D.

Frequently asked questions

What is BAT60BE6327HTSA1's listed speed?

The diode is rated as fast recovery with a recovery time ≤500 ns at forward current >200 mA. This qualifies it for switching applications up to the low-MHz range.