The Infineon BAT54-02LRHE6327 is a Schottky diode rated for 30 V reverse voltage and 200 mA average rectified current, housed in the tiny SOD-882 leadless package (PG-TSLP-2-7). Its 5 ns reverse recovery time and low forward voltage of 800 mV at 100 mA make it a standard choice for low-voltage, high-speed switching applications — polarity protection, freewheeling, and DC-DC converter catch diodes in space-constrained portable and industrial designs.
Package and marking — what to verify on incoming inspection
The PG-TSLP-2-7 supplier device code identifies the exact leadless package variant. On receipt, check the laser marking against Infineon's published marking diagram; the date code should be consistent across a single lot. The SOD-882 footprint is small enough that a reflow profile mismatch can cause tombstoning — verify the solder paste aperture matches the recommended stencil design.
The 30 V reverse voltage (Vr max) sets the peak repetitive or transient reverse bias this diode can block — enough for 5 V, 12 V, and even 24 V rails with derating. The 200 mA forward current average is the DC load limit; peak repetitive currents can be higher, but the junction temperature must stay under 150 °C. The 5 ns reverse recovery time is the key speed spec: in a 500 kHz or 1 MHz switching regulator, that trr keeps the diode from adding significant switching loss. The 10 pF junction capacitance at 1 V reverse bias matters for RF or high-speed signal clamping — it will not load a 10 MHz data line significantly. The 2 µA reverse leakage at 25 V is typical for a Schottky at this voltage class; expect it to rise with temperature, so budget leakage in high-impedance or battery-powered circuits.