BAT17E6327HTSA1

Infineon Technologies

Infineon BAT17E6327HTSA1, Schottky Diode - Single, 130 mA, 4 V, 150 mW, SOT-23-3, PG-SOT23.

Infineon Technologies BAT17E6327HTSA1
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BAT17E6327HTSA1 specifications
Parameter / AttributeSpecification / Value
Diode typeSchottky - Single
Voltage - peak reverse4V
Current - max130 mA
Power dissipation150 mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistance @ if,15Ohm @ 5mA, 10kHz
Capacitance @ vr,0.75pF @ 0V, 1MHz

Technical details

Small-signal Schottky for RF detector and mixer work

The Infineon BAT17E6327HTSA1 is a single Schottky diode in a SOT-23-3 package, rated for a maximum forward current of 130 mA and a peak reverse voltage of 4 V. Its key distinguishing features are the low junction capacitance of 0.75 pF at 0 V and a series resistance of 15 Ohm at 5 mA, which together make it suited for RF detector, mixer, and clamping applications where signal integrity at high frequencies matters. The 150°C junction temperature rating gives thermal headroom in compact or warm enclosures.

The 130 mA rating is the absolute maximum. Signal-level currents are typically well below 10 mA.

Package and rework — SOT-23 is a bench-friendly footprint

The SOT-23-3 (PG-SOT23) package has three pins and low thermal mass. It lifts clean with hot air without damaging the board.

No end-of-life notification has been issued.

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