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Infineon Technologies BAT1503WE6327HTSA1

Infineon BAT1503WE6327HTSA1 Schottky Diode, 4V, 110 mA

MPNBAT1503WE6327HTSA1
End of Life

Infineon BAT1503WE6327HTSA1, Schottky - Single diode, 4V peak reverse voltage, 110 mA forward current, 100 mW power dissipation, 0.35pF capacitance, SOD-323 package, 150°C junction temperature.

$0.51Ref. price · indicative, final on quote
PackagingSC-76, SOD-323
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAT1503WE6327HTSA1 specifications
ParameterValue
Diode typeSchottky - Single
Voltage - peak reverse4V
Current - max110 mA
Power dissipation100 mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-76, SOD-323
Capacitance @ vr,0.35pF @ 0V, 1MHz

Product details

Schottky for RF detection and low-level clamping

The Infineon BAT1503WE6327HTSA1 is a single Schottky diode in a SOD-323 package, rated for a peak reverse voltage of 4V and a forward current of 110 mA. Its 0.35pF capacitance at 0V bias makes it suited for RF detector, mixer, and low-level clamping applications where signal integrity matters more than bulk rectification. The 150°C junction temperature rating provides thermal headroom in compact RF front-ends or automotive modules.

At 0V bias and 1 MHz, the diode presents 0.35pF of junction capacitance.

No last-time-buy windows or end-of-life notices are in effect.

Frequently asked questions

Is BAT1503WE6327HTSA1 obsolete or still active?

The BAT1503WE6327HTSA1 is Active in production with no end-of-life or last-time-buy notices. It is ROHS3 compliant and suitable for new designs.

Does BAT1503WE6327HTSA1 have a recommended replacement or equivalent?

No official replacement or second-source alternate is listed in the lifecycle record. The part is active, so no substitute is needed for production continuity.