Schottky for RF detection and low-level clamping
The Infineon BAT1503WE6327HTSA1 is a single Schottky diode in a SOD-323 package, rated for a peak reverse voltage of 4V and a forward current of 110 mA. Its 0.35pF capacitance at 0V bias makes it suited for RF detector, mixer, and low-level clamping applications where signal integrity matters more than bulk rectification. The 150°C junction temperature rating provides thermal headroom in compact RF front-ends or automotive modules.
0.35pF — what it means for the RF path
At 0V bias and 1 MHz, the diode presents 0.35pF of junction capacitance.
Active production — no obsolescence pressure
The BAT1503WE6327HTSA1 carries an Active lifecycle status and is ROHS3 compliant. No last-time-buy windows or end-of-life notices are in effect. For new designs or production replenishment, this part is available through independent distribution and quoted to order against an RFQ.
