RF detector diode with 0.35 pF junction capacitance
The Infineon BAT1502LRHE6327XTSA1 is a single Schottky diode optimised for RF detector, mixer, and sampling applications up into the low-GHz range. The key enabler is the 0.35 pF junction capacitance at 0 V bias — that low Cj keeps the capacitive reactance high at microwave frequencies, so the diode's series resistance dominates the impedance and the detection sensitivity stays flat across the band.
110 mA forward current and 100 mW power ceiling
Rated for 110 mA continuous forward current and 100 mW total power dissipation at a 150°C junction temperature. In a typical RF detector the diode operates well below 10 mA, so the thermal margin is generous — but if you are using it as a low-level limiter or in a zero-bias configuration, the 100 mW limit means the PCB land pattern and any nearby heat sources need a quick thermal check. The SOD-882 body is 0.60 × 0.30 mm with 0.35 mm height; the copper pad area under the cathode terminal sets the effective RthJA.
Active production, RoHS3, no known second source
ROHS3 compliant per the current revision. No official cross-reference or pin-compatible second source has been published by Infineon; for dual-sourcing resilience the design should accommodate a functionally equivalent Schottky in the same SOD-882 footprint, but the 0.35 pF Cj spec is tight enough that a drop-in substitute is not guaranteed without re-characterising the RF front-end.