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Infineon Technologies BAT15-099E6327 — Discrete Semiconductors

Infineon BAT15-099E6327 Schottky Diode, 110 mA, 4V

MPNBAT15-099E6327
End of Life

Infineon Technologies BAT15 series RF Schottky diode, 2 independent, 110 mA max, 4 V peak reverse, PG-SOT143-4 package, Bulk.

$0.21Ref. price · indicative, final on quote
PackagingTO-253-4, TO-253AA
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BAT15-099E6327 specifications
ParameterValue
Diode typeSchottky - 2 Independent
Voltage - peak reverse4V
Current - max110 mA
Power dissipation100 mW
Operating temperature150°C (TJ)
PackageBulk
CaseTO-253-4, TO-253AA
Resistance @ if,5.5Ohm @ 50mA, 1MHz
Capacitance @ vr,0.5pF @ 0V, 1MHz

Product details

The BAT15-099E6327 is an Infineon RF Schottky diode array with two independent junctions in a single SOT143-4 package, designed for mixer and detector circuits up to low-UHF frequencies. Each diode is rated for a maximum continuous current of 110 mA and a peak reverse voltage of 4 V, with a typical forward resistance of 5.5 Ω at 50 mA and 1 MHz — the low junction capacitance of 0.5 pF at 0 V bias keeps the RF signal path clean through the mixer core.

Housed in the PG-SOT143-4 package (TO-253-4 / TO-253AA equivalent), the four-pin footprint places the two Schottky junctions in a common-cathode or series configuration depending on the board layout — the datasheet pinout should be confirmed against the existing pad pattern before a re-spin.