4V peak reverse — the RF detector boundary
The BAT15-05WH6327XTSA3 is an Infineon RF Schottky diode pair in a common-cathode configuration, designed for mixer and detector circuits up to the low-GHz range. Its 4V peak reverse voltage sets the hard limit — this is not a rectifier or a protection clamp. The 110 mA maximum current confirms it lives in the small-signal domain: think RF power detection, envelope detection, and mixer cells where the signal amplitude stays well under a volt.
0.5 pF junction capacitance — the bandwidth enabler
At 0V bias, the capacitance measures 0.5 pF. That low value keeps the diode from loading the RF node at UHF and low-microwave frequencies — a mixer or detector built with this part will hold its conversion loss flat past 2 GHz. The 5.5 Ohm series resistance at 50 mA adds a few tenths of a dB of loss but is well within the budget for a passive mixer front-end.
PG-SOT323-3 — the footprint reality
The part ships in a PG-SOT323-3 package, the Infineon designation for the standard SOT-323 footprint. Three leads, 0.65 mm pitch, the common cathode on pin 2. The 100 mW power dissipation ceiling means the board copper under the part is the thermal path — no exposed pad, so keep the trace width modest and don't plan on sinking heat through the package. Junction temperature is rated to 150°C, which is typical for a silicon Schottky; the derating starts well before that in a 85°C ambient.
Active and available
Infineon lists the BAT15-05WH6327XTSA3 as Active. For a dual-sourcing check, the BAT15-03W is the single-diode variant in the same SOT-323 footprint, but the common-cathode pair is what this order code delivers.